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Patents & Publications

Patents:

  1. Theodore F. Ciszek, “Method of Growing Semiconductor Rods from a Pedestal,” U.S. Patent 3,627,500 (1971).
  2. Theodore Frank Ciszek, “Method for Drawing a Monocrystal from a Melt Formed About a Wettable Projection,” U.S. Patent 4,000,030 (1976).
  3. Theodore Frank Ciszek and Guenter Herbert Schwuttke, “Method and Apparatus For Forming An Elongated Silicon Crystalline Body Using a <110>{211} Orientated Seed Crystal,” U.S. Patent 4,075,055 (1978).
  4. Theodore F. Ciszek, “Apparatus for Pulling Crystal Ribbons from a Truncated Wedge Shaped Die,” U.S Patent 4,116,641 (1978).
  5. Robert A. Frosch, Theodore F. Ciszek, and Guenther H. Schwuttke, “Growth of Silicon Carbide Crystals On a Seed while pulling Silicon Crystals From a Melt,” U.S Patent 4,152,194 (1979).
  6. Robert A. Frosch and Theodore F. Ciszek, “Method of Growing a Ribbon Crystal Particularly Suited For Facilitating Automated Control of Ribbon Width,” U.S. Patent 4,217,165 (1980).
  7. Theodore F. Ciszek, “Method and Apparatus for Forming Silicon Crystalline Bodies,” U.S. Patent 4,239,734 (1980).
  8. Theodore F. Ciszek and G.H. Schwuttke, “Method for Directional Solidification of Silicon,” U.S. Patent       4,243,471 (1981).
  9. Theodore F. Ciszek and G.H. Schwuttke, “Method and Apparatus for Drawing a Monocrystalline Ribbon from a Melt,” U.S. Patent 4,299,648 (1981).
  10. Theodore F. Ciszek, “Method For Forming Silicon Crystalline Bodies,” U.S. Patent 4,304,623 (1981).
  11. Theodore F. Ciszek, “Method and Apparatus for Casting Conductive and Semiconductive Materials,” U.S. Patent 4,572,812 (1986).
  12. Theodore F. Ciszek and Jeffrey L. Hurd, “Apparatus for Melt Growth of Crystalline Semiconductor Sheets,” U.S. Patent 4,594,229  (1986).
  13. Theodore F. Ciszek, “Apparatus and Method for the Horizontal, Crucible‑Free Growth of Silicon Sheet Crystals,” U.S. Patent 4,650,541 (1987).
  14. Theodore F. Ciszek, “Method of Synthesizing and Growing Copper‑Indium‑Diselenide (CuInSe2) Crystals,” U.S. Patent 4,652,332 (1987).
  15. Theodore F. Ciszek, “Large Single Crystal           Quaternary Alloys of IB‑IIIA‑Se2 and Methods of Synthesizing the Same,” U.S. Patent 4,721,539 (1988).
  16. Theodore F. Ciszek, “Method for the Melt‑Growth of Ternary III‑V Crystals Which are Uniform in Composition,” US Patent 5,047,112 (1991).
  17. Theodore F. Ciszek, “Method for Forming Thin, Large‑Area Superconducting Layers on Flat and/or Elongated Substrates,” U. S. Patent 5,304,534 (1994)
  18. Theodore F. Ciszek, “Thin Silicon Layer Crystallization from High‑Temperature Solutions of Si in Copper,” U. S. Patent 5,314,571 (1994).
  19. Theodore F. Ciszek, “Apparatus and Method for Measuring the Thickness of Semiconductor Wafers,” U. S.  Patent 5,396,332 (1995)
  20. Theodore F. Ciszek, “Substrate for Thin Silicon Solar Cells,” U.S. Patent 5,401,331 (1995).
  21. Theodore F. Ciszek and Tihu Wang, “Crystallization from High Temperature Solutions of Si in Cu/Al Solvent,” U.S. Patent 5,544,616 (1996).
  22. Theodore F. Ciszek, “Substrate for Thin Silicon Solar Cells,” U.S. Patent 5,785,769 (1998).
  23. Tihu Wang and Theodore F. Ciszek, “Process for Polycrystalline Film Silicon Growth,” U.S. Patent 6,281,098 B1 (Aug. 28, 2001).
  24. Tihu Wang and Theodore F. Ciszek , “Purified Silicon Production System,” U.S. Patent 6,712,908 B2 (Mar. 30, 2004).  
  25. Tihu Wang and Theodore F. Ciszek , “Purification and Deposition of Silicon By An Iodide Disproportionation Reaction,” U.S. Patent 6,468,886 (2002).  
  26. Tihu Wang and Theodore Ciszek, “Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth,” U.S. Patent 6,984,263  (Jan. 10, 2006).
  27. Sefa Yilmaz, Theodore F. Ciszek, Matthew J. Miller, and Stein Julsrud,  “Method and Apparatus for Consolidation of Granular Silicon and Measuring Non-metals Content,” U.S. Patent Application No 20150225246  (Aug. 13, 2015).
  28. Theodore F. Ciszek and Tihu Wang, “Method for Purifying Silicon Feedstock via Silicon Recrystallization for Impure Silicon in Selected Metals,” Provisional Patent Application filed.
  29. Theodore F. Ciszek, “Device for High Throughput Growth of Thin Silicon Rods Used as Substrates in Polycrystalline Silicon Production,” Provisional Patent Application filed.

 Publications:

1.           T.F. Ciszek, “Solid-Liquid Interface Morphology of Float‑Zoned Silicon Crystals,” in: Semiconductor Silicon , Eds. R.R. Haberecht and E.L. Kern (The Electrochemical Soc., New York, 1969) pp. 156-68. 

2.           E. Sirtl and T.F. Ciszek, “Controlled Growth and Dissolution of Semiconductor Crystals,” in: Preprint Volume, Materials Engineering and Sciences Division Biennial Conference, Atlanta, Georgia (AIChE, 67th National Meeting, 1970) pp. 104-111. 

3.           T.F. Ciszek, “Non‑Cylindrical Growth Habit of Float‑Zoned Dislocation‑Free [111] Silicon Crystals,” J. of Crystal Growth 10 (1971) 263. 

4.           T.F. Ciszek, “Growth of 40 mm Diameter Silicon Crystals by a Pedestal Technique Using Electron Beam Heating,” J. of Crystal Growth 12 (1972) 281. 

5.           T.F. Ciszek, “Edge-Defined, Film-Fed Growth of Silicon Ribbons,” Mat. Res. Bull. 7 (1972) 731. 

6.           T.F. Ciszek, “Characteristics of [115] Dislocation‑Free Float‑Zoned Silicon Crystals,” J. Elec. Chem. Soc. 120 (1973) 799. 

7.           T.F. Ciszek, “Copper Decoration and X‑ray Topography of Point Defects in Dislocation‑Free Silicon Crystals Grown Under Various Conditions,” in: Semiconductor Silicon 1973, Eds. H.R. Huff and R.R. Burgess (The Electrochemical Soc., Chicago 1973) pp. 150‑160. 

8.           T.F. Ciszek and G.H. Schwuttke, “Silicon Ribbons ‑ A New Approach to Low Cost Single Crystal Silicon Solar Cells,” in: Proc. International Conf. on Photovoltaic Power Generation, Hamburg, Germany, Sept. 25‑27, 1974, Ed. H.R. Losch (Deutschen Gesellschaft fur Luft‑ und Raumfahrt e. V., Koln, 1974) pp. 159‑175. 

9.           T.F. Ciszek and G.H. Schwuttke, “Growth and Characterization of Silicon Ribbons Produced by a Capillary Action Shaping Technique,” phys. stat. sol. (a) 27, (1975) 231. 

10.       T.F. Ciszek, “Melt Growth of Crystalline Silicon Tubes by a Capillary Action Shaping Technique,” phys. stat. sol. (a) 32, (1975) 521. 

11.       T.F. Ciszek, “Maximum Growth Rates for Melt‑Grown Ribbon‑shaped Crystals,” J. Appl. Phys. 47, (1976) 440. 

12.       T.F. Ciszek and G.H. Schwuttke, “Thermal Balancing via Distributed Inert‑Gas Streams for High‑Meniscus Ribbon Crystal Growth,” J. of Crystal Growth 42 (1977) 483. 

13.       T.F. Ciszek and G.H. Schwuttke, “Inexpensive Silicon Sheets for Solar Cells,” NASA Tech. Briefs, Winter (1977) 432. 

14.       G.H. Schwuttke, K. Yang, and T.F. Ciszek, “Electrical and Structural Characterization of Silicon Ribbons Produced through Capillary Action Shaping,” J. Crystal Growth 43 (1978) 329. 

15.       G.H. Schwuttke, T.F. Ciszek, K.H. Yang, and A. Kran, “Low Cost Silicon for Solar Energy Conversion Applications,” IBM J. of Research and Dev. 22 (1978) 335. 

16.       T.F. Ciszek, G.H. Schwuttke, and K.H. Yang, “Directionally Solidified Solar‑Grade Silicon Using Carbon Crucibles,” J. Crystal Growth 46 (1979) 527. 

17.       T.F. Ciszek, “Device for Monitoring the Growth of Silicon Crystal,” Ribbons, Insul./Circuits 25 (1979) 23. 

18.       L.L. Kazmerski, P.J. Ireland and T.F. Ciszek, “SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon, Proc. Second Int. Conf. on Secondary Ion Mass Spectroscopy,” Palo Alto, CA. (Springer‑Verlag, NY, 1979), pp. 103‑106. 

19.       T.F. Ciszek, G.H. Schwuttke, and K.H. Yang, “Solar‑Grade Silicon by Directional Solidification in Carbon Crucibles,” IBM, J. Res. & Dev. 23, (1979) 270. 

20.       K. Yang, G.H. Schwuttke, and T.F. Ciszek, “Structural and Electrical Characterization of Crystallographic Defects in Silicon Ribbons,” J. Crystal Growth 50 (1980) 301. 

21.       T.F. Ciszek, G.H. Schwuttke, and K.H. Yang, “Factors Influencing Surface Quality and Impurity Distribution in Silicon Ribbons Grown by the Capillary Action Shaping Technique (CAST),” J. Crystal Growth 50 (1980) 160. 

22.       T.F. Ciszek and J.L. Hurd, “Melt Growth of Silicon Sheets by Edge‑Supported Pulling,” in: Proceedings of the Symposia on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods, Ed. K.V. Ravi and B. O’Mara. St. Louis, MO; ll‑l6 May, l980 (The Electrochemical Soc., Pennington, NJ, 1980, Proceedings Volume 80‑5) pp. 213‑222. 

23.       T.F. Ciszek and J.L. Hurd, “Contiguous Capillary Coating of Silicon on Porous Carbon Substrates,” in: l4th IEEE Photovoltaic Specialist Conf. Record, San Diego, Calif. Jan. 7‑10, 1980 (IEEE, New York, 1980) pp. 397‑399. 

24.       L.L. Kazmerski, P.J. Ireland and T.F. Ciszek, “Evidence for the Segregation of Impurities to Grain Boundaries in Multigained Silicon Using AES and SIMS,” Appl. Phys. Lett. 36 (1980) 323. 

25.       L.L. Kazmerski, P.J. Ireland, and T.F. Ciszek, “Electrical and Compositional Properties of Grain Boundaries in Multigrained Silicon Using Surface Analysis Techniques,” J. Vac. Sci. Technol. 17, (1980) 34. 

26.       T.F. Ciszek (Book Chapter), “The Capillary Action Shaping Technique and Its Applications,” in: Crystals‑ Growth, Properties, and Applications, Vol. 5, Ed. J. Grabmaier (Springer‑Verlag, Berlin, 1981) pp. 110‑146. 

27.       T.F. Ciszek, M. Schietzelt, L.L. Kazmerski, J.L. Hurd and B. Fernelius, “Growth of Silicon Sheets from Metallurgical Grade Silicon,” in: l5th IEEE Photovoltaics Specialist Conf. Record, Kissimmee, FL, 1981 (IEEE, New York, 1981) pp. 581‑588. 

28.       T.F. Ciszek, “A Comparison of Crystal Growth Techniques for Low‑Cost Silicon Solar Cells” (invited), in: Proceedings I. Simposio Brasileiro de Microelectronica (9‑11 Sept. 1981, Sao Paulo) p. 485. 

29.       T.F. Ciszek, “Edge‑Supported Pulling of Silicon Sheets,” in: Proceedings I. Simposio Brasileiro de Microelectronica (9‑11 Sept. 1981, Sao Paulo) p. 559. 

30.       T.F. Ciszek, “Silicon Crystal Growth for Photovoltaic Applications ‑ A Review and Comparison of Methods” (Invited), in: Proc. of Symp. Materials and New Processing Technologies for Photovoltaics, Ed. John P. Dismukes, et. al. Montreal, May, 1982 (The Electrochemical Soc., Pennington, NJ, 1982, Proceedings Volume 82‑8) pp. 70‑88. 

31.       T.F. Ciszek, J.L. Hurd, and M. Schietzelt, “Filament Materials for Edge‑Supported Pulling of Silicon Sheet Crystals,” J. Electrochem. Soc. 129 (1982) 2838. 

32.       J.L. Hurd and T.F. Ciszek, “Semicontinuous Edge‑Supported Pulling of Silicon Sheets,” J. Crystal Growth 59 (1982) 499. 

33.       T.F. Ciszek (invited plenary address), “Silicon Sheet Technologies,” in: 16th IEEE Photovoltaic Specialists Conf. Record, San Diego, CA, 1982 (IEEE, New York, 1982) p. 316. 

34.       T.D. Burleigh, S. Wagner, and T.F. Ciszek, “Ellipsometry of Randomly Rough Oxidized Silicon Surfaces,” Solar Cells 13 (1984) 179. 

35.       S. Hogan, T. Schuyler and T.F. Ciszek, “Characterization of Bicrystal Grain Boundary Properties Using Device Structures,” in: 17th IEEE Photovoltaic Specialists Conf. Record, Kissimmee, Fl, 1984 (IEEE,  New York, 1984) pp. 574‑579. 

36.       Y.S. Tsuo, J.L. Hurd, R.J. Matson and T.F. Ciszek, “Electron Channeling and EBIC Studies of Edge‑Supported Pulling Silicon Sheets,” IEEE Transactions on Electron Devices ED‑31 (1984) 614. 

37.       T.F. Ciszek, “Orientation and Morphology Effects in Rapid Silicon Sheet Solidification,” in:       Proceedings of the Flat‑Plate Solar Array Project Research Forum on the High‑Speed Growth and Characterization of Crystals for Solar Cells, Ed. K.A. Dumas (Jet Propulsion Laboratory Publication 84‑23, Pasadena,1984) p. 223. 

38.       T.F. Ciszek (Invited Review), “Techniques for the Crystal Growth of Silicon Ingots and Ribbons,” J. Crystal Growth 66 (1984) 655. 

39.       T.F. Ciszek, “Growth and Properties of [100] and [111] Dislocation-free Silicon Crystals from a Cold Crucible,” J. of Crystal Growth 70 (1984) 324. 

40.       T.F. Ciszek, “Growth and Properties of CuInSe2 Crystals Produced by Chemical Vapor Transport with Iodine,” J. of Crystal Growth 70 (1984) 405. 

41.       J.L. Hurd and T.F. Ciszek, “Growth and Properties of CuInSe2 Crystals from Hydrothermal Solution,” J. of Crystal Growth 70 (1984) 415. 

42.       T.D. Burleigh, S. Wagner, and T.F. Ciszek, “Ellipsometry of Randomly Rough Oxidized Silicon Surfaces,” Solar Cells (1984), 13, 2, 179-183. 

43.       T.F. Ciszek, “Crystallographic Growth Forms of Silicon on a Free Melt Surface,” J. Electrochem. Soc. 132 (1985) 422. 

44.       T.F. Ciszek (Book Chapter), “The Growth of Silicon Ribbons for Photovoltaics by Edge‑Supported Pulling,” in:       Silicon Processing for Photovoltaics, Eds. C.P. Khattak and K.V. Ravi (Elsevier Science Publishers, Amsterdam, 1985) p. 131. 

45.       T.F. Ciszek, “Solid/Melt Interface Studies of High‑Speed Silicon Sheet Growth,” Final Report, DOE/JPL Contract WO8746‑83‑1, (1985). 

46.       T.F. Ciszek, “Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation,” J. Electrochemical Soc. 132 (1985) 963. 

47.       T.F. Ciszek, S. Hogan, and J.L. Hurd, “Silicon Sheet Bicrystal Growth for the Study of Grain Boundary Effects in Solar Cells,” J. Crystal Growth 69 (1984) 335. 

48.       T.F. Ciszek (Book Chapter), “Silicon for Solar Cells,” in: Crystal Growth of Electronic Materials, Ed. E. Kaldis, (Elsevier Science Publishers, Amsterdam, 1985) pp. 185‑210. 

49.       T.F. Ciszek, “Synthesis and Crystal Growth of Copper Indium Diselenide from the Melt,” J. of Electronic Materials 14 (1985) 451. 

50.       T.F. Ciszek, “Current Status of Silicon Materials Research for Photovoltaic Applications,” in: SPIE Proceedings of Symposium on Photovoltaics, Ed. Satyen K. Deb, Arlington, VA, April 1‑12, 1985 (SPIE, Bellingham, WA, 1985, Proceedings Volume 543) pp. 10‑19. 

51.       T.F. Ciszek, “High Purity Silicon Crystal Growth Investigations, Final Report, DOE/JPL Contract WO8762‑84‑1 (1986). 

52.       T.F. Ciszek, “A Graphical Treatment of Combined Evaporation and Segregation Contributions to Impurity Profiles for Zone‑Refining in Vacuum,” J. of Crystal Growth 75 (1986) 61. 

53.       T.F. Ciszek, “Melt Growth and Some Properties of CuxAg(1‑x)InSe2 and CuInyGa(1‑y)Se2 Chalcopyrite Alloy Crystals,” J. of Crystal Growth 79 (1986) 689. 

54.       R. Bacewicz, J.R. Durrant, T.F. Ciszek, and S.K. Deb, “Optical and Electrical Properties of CuxAg1‑xInSe2 and CuInyGa1‑ySe2 Alloys,” Proceedings of the 7th International Conference on Ternary and Multinary Compounds, Eds. S. K. Deb and A. Zunger, (Materials Research Society Press, Pittsburgh, 1987) pp. 155‑160. 

55.       T.F. Ciszek, C.D. Evans, and S.K. Deb, “Lattice Parameter Determinations of CuxAg1‑xInSe2 and CuInyGa1‑ySe2 Crystalline Chalcopyrite Quaternary Solid Solutions Grown from the Melt,” Proceedings of the 7th International Conference on Ternary and Multinary Compounds, Eds. S. K. Deb and A. Zunger (Materials Research Society Press, Pittsburgh, 1987) pp. 195‑200. 

56.       T.F. Ciszek, “Material Considerations for High‑Efficiency Silicon Solar Cells,” Solar Cells 21 (1987) 81. 

57.       T.F. Ciszek, “X‑Ray Topographic Observations of Crystal Structure in Silicon Ribbons Grown by Various Methods,” J. of Crystal Growth 82 (1987) 182. 

58.       T. F. Ciszek, R. Bacewicz, J. R. Durrant, S. K. Deb, and D. Dunlavy, “Crystal Growth and Photoelectrical Properties of CuxAg1‑xInSe2 and CuInyGa1‑ySe2 Solid Solutions,” in: 19th IEEE Photovoltaic Specialists Conf. Record, New Orleans, 1987 (IEEE, New York, 1987) p. 1448. 

59.       R. R. King, R. A. Sinton, R. M. Swanson, and T. F. Ciszek, “Low Surface Recombination Velocities on Doped Silicon and Their Implications for Point Contact Solar Cells,” in: 19th IEEE Photovoltaic Specialists Conf. Record, New Orleans, 1987 (IEEE, New York, 1987) p. 1168. 

60.       D. G. Kilday, G. Margaritondo, T. F. Ciszek, S. K. Deb, and Alex Zunger, “The Common‑Anion Rule and Its Limits:       Photoemission Studies of CuInxGa1‑xSe2‑Ge and CuxAg1‑xInSe2‑Ge Interfaces,” Phys. Rev. B 36 (1987) 9388. 

61.       H. Katayama‑Yoshida, Y. Okabe, T. Takahashi, T. Sasaki, T. Hirooka, T. Suzuki, T. Ciszek, and S. Deb, “Growth of YBa2Cu3O7‑x Single Crystals,” Japanese Journal of Applied Physics 26 (1987) L2007. 

62.       H. Katayama‑Yoshida, T. Hirooka, A. Mascarenhas, Y. Okabe, T. Takahashi, T. Sasaki, A. Ochiai, T. Suzuki, J. Pankove, T. Ciszek, and S. Deb, “Isotope Effect in Superconducting YBa2Cu3O7‑x System,” Japanese Journal of Applied Physics 26 (1987) L2085. 

63.       R. Bacewicz and T. F. Ciszek, “Preparation and Characterization of Some AIBIICV Type Semiconductors,” Appl. Phys. Lett. 52 (1988) 1150. 

64.       T. H. Wang, T. F. Ciszek, and T. Schuyler, “Micro‑Defect Effects on Minority Carrier Lifetime in High Purity, Dislocation‑Free Silicon Single Crystals” Solar Cells. 24 (1988) 135. 

65.       T. F. Ciszek and C. D. Evans, “A Simple High‑Pressure Furnace for Liquid‑Encapsulated Bridgman/Stockbarger Crystal Growth,” Journal of Crystal Growth 91 (1988) 533. 

66.       R. Bacewicz and T.F. Ciszek, “A New Narrow‑Gap Semiconductor LiCdAs,” Mat. Res. Bull. 23 (1988) 1247. 

67.       D. G. Kilday, G. Margaritondo, T. F. Ciszek, and S. K. Deb, “The Common‑Anion Rule and the Role of Cation States: Binary versus Ternary Semiconductors,” J. Vac. Sci. Technol. B 6 (1988) 1364. 

68.       T. F. Ciszek, J. P. Goral, C. D. Evans and H. Katayama‑Yoshida, “Crystal Growth and Superconducting Phase Formation from Bi‑Ca‑Sr‑Cu‑O Liquids,” J. of Crystal Growth 91 (1988) 312. 

69.       H. Katayama‑Yoshida, T. Yonezawa, T. Hirooka, Y. Okabe, T. Takahashi, T. Sasaki, M. Hongoh, Y. Yamada, T. Suzuki, S. Hosoya, M. Sato, T. Ciszek and S. K. Deb, “Growth and Characterization of YBa2Cu3O7‑x Single Crystals,” Physica C 153 (1988) 425. 

70.       H. Katayama‑Yoshida, T. Hirooka, A. Oyamada, Y. Okabe, T. Takahashi, T. Sasaki, A. Ochiai, T. Suzuki, A. J. Mascarenhas, J. I. Pankove, T. F. Ciszek, S. K. Deb, R. B. Goldfarb, and Yongkang Li “Oxygen Isotope Effect in the Superconducting Bi‑Sr‑Ca‑Cu‑O System,” Physica C 156 (1988) 481. 

71.       R. B. Goldfarb, T. F. Ciszek, and C. D. Evans, “Superconducting Properties of Melt‑Cast Bi‑Sr‑Ca‑Cu‑O,” J. Appl. Phys. 64 (1988) 5914. 

72.       S. K. Pang, A. Rohatgi, and T. F. Ciszek “Doping Dependence of Minority Carrier Lifetime in Ga‑Doped Silicon,” in: 20th IEEE Photovoltaic Specialists Conf. Record, Las Vegas, 1988 (IEEE, New York, 1988) p. 435. 

73.       T. F. Ciszek, “Silicon Material Quality and Throughput: The High and the Low, the Fast and the Slow,” in: 20th IEEE Photovoltaic Specialists Conf. Record, Las Vegas, 1988 (IEEE, New York, 1988) p. 31. 

74.       T. F. Ciszek, Tihu Wang, T. Schuyler, and A. Rohatgi, “Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in Float‑Zoned Silicon,” J. Electrochem. Soc. 136 (1989) 230. 

75.       T. F. Ciszek and E. Tarsa, “Determination of the Superconducting Transition Onset Temperature in Small‑Volume Specimens,” in: Science and Technology of Thin‑Film Superconductors, Eds. Bob McConnell and Stuart Wolf (Plenum Publishing Corp., New York, 1989) p. 415. 

76.       T. F. Ciszek and C. D. Evans, “Melt Growth of Bi‑Sr‑Ca‑Cu‑O Superconducting Sheets and Filaments,” in:       Science and Technology of Thin‑Film Superconductors, Eds. Bob McConnell and Stuart Wolf (Plenum Publishing Corp., New York, 1989) p. 301. 

77.       T. F. Ciszek and C. D. Evans, “Single Crystal Growth of YBa2Cu3O7‑x, ErBa2Cu3O7‑x, and Bi2Sr2Ca0.8Cu2O8 Superconductors,” Proceedings of Industry‑University Advanced Materials Conference, Denver, March 6‑9, 1989, p. 512. 

78.       T. F. Ciszek, T. Schuyler, and T. Wang,       “Crystal Growth Parameter Effects on the Minority Charge Carrier Lifetime of High‑Purity, Dislocation‑Free, Float‑Zoned Silicon,” Proceedings of Industry‑University Advanced Materials Conference, Denver, March 6‑9, 1989, p. 264. 

79.       T. F. Ciszek, R. Schwerdtfeger and C. D. Evans, “Liquid‑Phase Formation of Bi‑Sr‑Ca‑Cu‑O Superconducting Wires and Sheets,” J. of Crystal Growth 104 (1990) 136. 

80.       R. Bacewicz and T. F. Ciszek, “Liquid‑Encapsulated Crystal Growth and Electrical Properties of Sb2Se3 and Bi2S3,” J. of Crystal Growth 109 (1991) 133. 

81.       T. H. Wang, T. F. Ciszek, and T. Schuyler, “Charge Carrier Recombination Centers in High‑Purity, Dislocation‑Free, Float‑Zoned Silicon Due to Growth‑Induced Microdefects,” J. of Crystal Growth 109 (1991) 155. 

82.       T. F. Ciszek and C. D. Evans, “Single‑Crystal Growth and Low‑Field AC Magnetic Susceptometry of YBa2Cu3O7‑x, ErBa2Cu3O7‑x, and Bi2Sr2Ca0.8Cu2O8 Superconductors,” J. of Crystal Growth 109 (1991) 418. 

83.       T. F. Ciszek, “Silicon Float‑Zoned Crystal Growth for High Minority Charge Carrier Lifetime Material Applications,” Solar Cells 30 (1991) 5. 

84.       L. A. Boatner, T. F. Ciszek, and T. Surek, (eds.) American Crystal Growth 1990, Special Issue of the J. of Crystal Growth 109 (1991). 

85.       S. P. Ahrenkiel, C. H.Qiu, N. Wada, and T. F. Ciszek, “Pressure‑Induced Oxygen Intercalation into YBa2Cu3O7‑x: Raman Scattering and X‑Ray Diffraction Studies,” M24 3, Bull. of the Amer. Phys. Society 36 no. 3, 1991. 

86.       C. H. Qiu, S. P. Ahrenkiel, N. Wada, and T. F. Ciszek, “X‑Ray Diffraction and High‑Pressure Raman Scattering Study of Iodine‑Intercalated Bi2Sr2CaCu2O8+x,” Physica C 185‑189 (1991) 825. 

87.       Geula Dagan, T. F. Ciszek, and David Cahen, “Ion Migration in Chalcopyrite Semiconductors,” J. Phys. Chem. 96 (1992) 11009. 

88.       T. F. Ciszek, R. W. Burrows, T. H. Wang, and J. Alleman, “Growth and Properties of Thin Crystalline Silicon Layers,” 11th Photovoltaic Advanced Research and Development Project Review Meeting, May 13‑15, 1992, Denver, AIP Conf. Proc. 268 (1992) 75. 

89.       C. R. Schwerdtfeger and T. F. Ciszek, “Large‑Grained Copper Indium Diselenide Crystal Growth by Computer Controlled High‑Pressure LEDS,” 11th Photovoltaic Advanced Research and Development Project Review Meeting, May 13‑15, 1992, Denver, AIP Conf. Proc. 268 (1992) 200. 

90.       T. F. Ciszek, T. H. Wang, R. W. Burrows and X. Wu, “High‑Temperature Solution Growth of Thin Crystalline Silicon Layers,” Proc. 11th European‑Community Photovoltaic Solar Energy Conference, Montreux, Switzerland, October 12‑16, 1992, pp. 423‑426. 

91.       T. F. Ciszek, T. H. Wang, R. W. Burrows and X. Wu, “Growth of Thin Crystalline Silicon Layers for Photovoltaic Device Use,” J. of Crystal Growth 128 (1993) 314. 

92.       C. H. Qui, N. Wada, and T. F. Ciszek, “Structural Transitions in Iodine‑Intercalated Bi2Sr2CaCu2O8+x: X‑Ray and Raman Scattering Studies,” Jpn. J. Appl. Phys. 32 (1993) Suppl. 32‑1, pp. 54‑56. 

93.       J.D. Webb, D.J. Dunlavy, T. Ciszek, R.K. Ahrenkiel, M.W. Wanlass, R. Noufi, and S.M. Vernon, “Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer,” Applied Spectroscopy 47 (1993) pp. 1814-1819. 

94.       T. F. Ciszek, T. H. Wang, R. W. Burrows, X. Wu, J. Alleman, Y. S. Tsuo, and T. Bekkedahl, “Grain Boundary and Dislocation Effects on the PV Performance of High‑Purity Silicon,” in: 23th IEEE Photovoltaic Specialists Conf. Record, Louisville, 1993 (IEEE, New York, 1993) p. 101. 

95.       T. F. Ciszek, T. H. Wang, X. Wu, R. W. Burrows, J. Alleman, C. R. Schwerdtfeger, and T. Bekkedahl, “Si Thin Layer Growth from Metal Solutions on Single‑Crystal and Cast Metallurgical‑Grade Multicrystalline Substrates,” (Invited Plenary) in: 23th IEEE Photovoltaic Specialists Conf. Record, Louisville, 1993 (IEEE, New York, 1993) p. 65. 

96.       Y.S. Tsuo, X. Wu, J.L. Alleman, X. Li, Y. Qu, T.F. Ciszek, R.E. Hollingsworth, and P.K. Bhat, “Solar Cell Structures Combining Amorphous, Microcrystalline, and Single-Crystalline Silicon,” in: 23th IEEE Photovoltaic Specialists Conf. Record, Louisville, 1993 (IEEE, New York, 1993) p. 92.  

97.       T. F. Ciszek, “Electromagnetic and Float‑Zone Methods for High‑Purity Silicon Solidification,” in: Containerless Processing Techniques and Applications,Eds. William F. Hofmeister and Robert Schiffman (The Minerals, Metals & Materials Society, Warrendale, PA, 1993) pp. 139-146. 

98.       T.H. Wang, T.F. Ciszek, Y.S. Tsuo, J. Alleman, X. Wu, C.R. Schwerdtfeger, and R.W. Burrows “Liquid Phase Epitaxy for Thin-Layer Silicon PV Devices” in: AIP Conference Proceedings No. 306, Eds. Rommel Noufi and Harin S. Ullal (American Inst. Of Physics, New York, 1994) pp. 92-99. 

99.       T.H. Wang, and T.F. Ciszek, “Growth Kinetics Studies of Silicon LPE from Metal Solutions,” in: 24th IEEE Photovoltaic Specialist Conf. Record, Waikoloa, HI.       Dec. 5-9, 1994. (IEEE, New Jersey, 1994) pp. 1250-1253. 

100.   Y.S. Tsuo, J.R. Pitts, M.D. Landry, C.E. Bingham, A. Lewandowski, and T.F. Ciszek, “High-Flux Solar Furnace Processing of Silicon Solar Cells,” in: 24th IEEE Photovoltaic Specialist Conf. Record, Waikoloa, HI. Dec. 5-9, 1994.       (IEEE, New Jersey, 1994) pp. 1307-1310. 

101.   T.F. Ciszek, T.H. Wang, R.W. Burrows, T. Bekkedahl, M.I. Symko, and J.D. Webb, “Effect of Nitrogen Doping on Microdefects and Minority Charge Carrier Lifetime of High-Purity, Dislocation-Free and Multicrystalline Silicon,” in: 24th IEEE Photovoltaic Specialist Conf. Record, Waikoloa, HI. Dec. 5-9, 1994.       (IEEE, New Jersey, 1994) pp. 1343-1346. 

102.   T.H. Wang, T.F. Ciszek, C.R. Schwertfeger, H. Moutinho, and R. Matson, “Growth of silicon thin layers on cast MG-Si from metal solution for solar cells,” Solar Energy Mat. and Solar Cells 41/42, (1996) pp. 19-30. 

103.   Y.S. Tsuo, J.R. Pitts, M.D. Landry, P. Menna, C.E. Bingham, A. Lewandowski, and T.F. Ciszek, “High-flux solar furnace processing of silicon solar cells,” Solar Energy Mat. and Solar Cells 41/42, (1996) pp. 41-51. 

104.   T.F. Ciszek, T.H. Wang, R.W. Burrows, T. Bekkedahl, M.I. Symko, and J.D. Webb, “Effect of nitrogen doping on microdefects and minority charge carrier lifetime of high-purity, dislocation-free and multicrystalline silicon,” Solar Energy Mat. and Solar Cells 41/42, (1996) pp. 61-70. 

105.   T.H. Wang, T.F. Ciszek, and C.R. Schwerdtfeger, “Macroscopically Smooth Si Layer Growth by LPE on Cast Metallurgical-Grade Silicon Substrates, AIP Conference Proceedings 353 (1996) pp. 503-510. 

106.   T.F. Ciszek “‘Containerless’ Solidification of Silicon by High-Purity Electromagnetic Techniques,” in: High Purity Silicon IV, Eds. C.L. Claeys, P. Rai-Choudhury, P. Stallhofer, J.E. Maurtis (The Electrochemical Soc., New Jersey, 1996) pp. 76-85. 

107.   Y.S. Tsuo, P. Menna, J.R. Pitts, K.R. Jantzen, S.E. Asher, M.M. Al-Jassim, and T.F. Ciszek, “Porous Silicon Gettering,” in: 25th IEEE Photovoltaic Specialist Conf. Record, Washington D.C., May 13-17, 1996 (IEEE, New Jersey, 1996) pp. 461-464. 

108.   P. Menna, Y.S. Tsuo, M.M. Al-Jassim, S.E. Asher, F.J. Pern, and T.F. Ciszek, “Light-emitting Porous Silicon from Cast Metallurgical-grade Silicon,” J. Electrochem. Soc. 143 (1996) pp. L115-L117. 

109.   T.H. Wang, T.F. Ciszek, R. Reedy, S.Asher, and D. King, “Surface Segregation as a Means of Gettering Cu in Liquid-Phase-Epitaxy Silicon Thin Layers Grown From Al-Cu-Si Solutions,” in: 25th IEEE Photovoltaic Specialist Conf. Record, Washington D.C. May 13-17, 1996 (IEEE, New Jersey, 1996) pp. 689-692. 

110.   T.F. Ciszek, T.H. Wang, R.K. Ahrenkiel, and R. Matson, “Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique,” in: 25th IEEE Photovoltaic Specialist Conf. Record, Washington D.C. May 13-17, 1996 (IEEE, New Jersey, 1996) pp. 737-739. 

111.   T.H. Wang, T.F. Ciszek, and R.K. Ahrenkiel, “Characterization of High-Purity Silicon with the Photoconductivity Decay and Photoluminescence Analysis Techniques,” in: High Purity Silicon IV, Eds. C.L. Claeys, P. Rai-Choudhury, P. Stallhofer, J.E. Maurtis (The Electrochemical Soc., New Jersey, 1996) pp. 462-469. 

112.   T.F. Ciszek and J.M. Gee, “Crystalline Silicon R&D at the U.S. National Center for Photovoltaics,” in: Proc. 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain (1997) pp. 53-56. 

113.   T.F. Ciszek and T.H. Wang, “Silicon Defect and Impurity Studies Using Controlled Samples,” in: Proc. 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain (1997) pp. 396-399. 

114.   T.H. Wang and T.F. Ciszek, “Impurity segregation in LPE growth of silicon from Cu-Al solutions,” Journal of Crystal Growth 174 (1997) 176-181. 

115.   James M. Gee, and Ted F. Ciszek, “The Crystalline-Silicon Photovoltaic R&D Project At NREL And SNL,” in: NREL/SNL Program Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 189-198.  

116.   Y.S. Tsuo, J.R. Pitts, P. Menna, M.D. Landry, J.M. Gee, and T.F. Ciszek, “High-flux Solar Furnace Processing of Crystalline Silicon Solar Cells,” in: NREL/SNL Program Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 751-758. 

117.   T.H. Wang and T.F. Ciszek, “Incorporation of Cu and Al in Thin Layer Silicon Grown from Cu-Al-Si,” in: NREL/SNL Program Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 771-778. 

118.   M. Landry, Y.S. Tsuo, T.F. Ciszek, R. Roze, and D. Hoegh, “Distributed Control and Process Monitoring for Photovoltaic Applications,” in: NREL/SNL Program Review, Proceedings of the 14th Conference (AIP Press, Woodbury, NY, 1997) pp. 787-794.  

119.   T.H. Wang and T.F. Ciszek, “Numerical Simulations of Transient Photoconductance Decay,” in: 26th IEEE Photovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 55-58. 

120.   T.F. Ciszek, T.H. Wang, W.A. Doolittle, and A. Rohatgi, “Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium,” in: 26th IEEE Photovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 59-62. 

121.   T.F. Ciszek and T.H. Wang, “Growth and Properties of Silicon Filaments for Photovoltaic Applications,” in: 26th IEEE Photovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 103-106. 

122.   J.T. Moore, T.H. Wang, M.J. Heben, K. Douglas, and T.F. Ciszek, “Fused-Salt Electrodeposition of Thin-Layer Silicon,” in: 26th IEEE Photovoltaic Specialist Conf. Record, Anaheim, CA, Sept. 29-Oct. 3, 1997 (IEEE, New Jersey, 1997) pp. 775-778. 

123.   Tihu Wang and Ted F. Ciszek, “Effects of Sample Inhomogeneity and Geometry on Photoconductivity Decay,” in Silicon Recombination Lifetime Characterization Methods, ASTM STP 1340, D.C. Gupta, F. Bacher, and W.H. Hughes, Eds., American Society for Testing Materials, pp. 88-98 (1998). 

124.   P. Menna, Y.S. Tsuo, M.M. Al-Jassim, S.E. Asher, R. Matson, and T.F. Ciszek, “Purification of Metallurgical-Grade Silicon by Porous-Silicon Etching,” in: Proc. 15th European Photovoltaic Solar Energy Conference, Vienna, Austria (1998) Vol. II: pp. 1232-1235. 

125.   T.F. Ciszek and T.H. Wang, “Float-zone Pedestal Growth of Thin Silicon Filaments,” in: High Purity Silicon V, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson (The Electrochemical Soc., Proceedings Volume 98-13, New Jersey, 1998) pp. 85-89. 

126.   T.F. Ciszek, T.H. Wang, W.A. Doolittle, and A. Rohatgi, “Iron-Gallium Pair Defects in Float-Zoned Silicon,” in: High Purity Silicon V, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson (The Electrochemical Soc., Proceedings Volume 98-13, New Jersey, 1998) pp. 230-240. 

127.   T.H. Wang, T.F. Ciszek, M. Landry, A. Matthaus, and G. Mihalik, “A Silicon Ingot Lifetime Tester for Industrial Use,” in: NCPV Photovoltaics Program Review, Proceedings of the 15th Conference, Eds. M. Al-Jassim, J.P. Thorton, and J.M. Gee, Denver, CO, Sept. 8-11, 1998 (AIP Press, Woodbury, NY, 1999) pp. 443-452. 

128.   Y.S. Tsuo, P. Menna, T.H. Wang, and T.F. Ciszek, “New Opportunities in Crystalline Silicon R&D,” in: NCPV Photovoltaics Program Review, Proceedings of the 15th Conference, Eds. M. Al-Jassim, J.P. Thorton, and J.M. Gee, Denver, CO, Sept. 8-11, 1998 (AIP Press, Woodbury, NY, 1999) pp. 453-458. 

129.   H.A. Atwater, B. Sopori, T. Ciszek, L.C. Feldman, J. Gee, and A. Rohatgi, “Research Opportunities in Crystalline Silicon Photovoltaics for the 21st Century,” in: Photovoltaics for the 21st Century, Eds. V.K. Kapur, R.D. McConnell, D. Carlson, G.P. Ceasar and A. Roghatgi (The Electrochemical Society Proceedings Volume 99-11, 1999), pp. 206-218. 

130.   Y.S. Tsuo, T.H. Wang, and T.F. Ciszek, “Crystalline-Silicon Solar Cells for the 21st Century,” in: Photovoltaics for the 21st Century, Eds. V.K. Kapur, R.D. McConnell, D. Carlson, G.P. Ceasar and A. Roghatgi (The Electrochemical Society Proceedings Volume 99-11, 1999), pp. 49-56. 

131.   T.F. Ciszek, T.H. Wang, M. Landry, A. Matthaus, and G. Mihalik, “A Silicon Ingot Lifetime Tester for Large Crystals,” in: Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, B.O. Kolbesen, et. al. Eds., (The Electrochemical Society Proceedings Volume 99-16, 1999) pp. 365-373. 

132.   T.H. Wang and T.F. Ciszek, “Growth of Large-Grain Silicon Layers by Atmospheric Iodine Vapor Transport,” J. of the Electrochem. Soc, 147 (5) (2000) pp. 1945-1949. 

133.   D.S. Ruby, T.F. Ciszek, and B.L. Sopori, “Research Needs of c-Si Technology Required to Meet Roadmap Milestones,” Program and Proceedings of NCPV Program Review Meeting 2000, April 2000, Denver, NREL/BK-520-28064, pp.27-28. 

134.   Y. Yan, M. M. Al-Jassim, T. H. Wang, and T. F. Ciszek, “Structure and Effects of Extended Defects in Polycrystalline Si Thin Films,” Program and Proceedings of NCPV Program Review Meeting 2000, April 2000, Denver, NREL/BK-520-28064, pp.193-194. 

135.   T.F. Ciszek, T.H. Wang, M. Page, J. Casey, R. Bauer, and E. Good, “Crystalline Silicon Materials Research,” Program and Proceedings of NCPV Program Review Meeting 2000, April 2000, Denver, NREL/BK-520-28064, pp.179-180. 

136.   T.H. Wang, T.F. Ciszek, M. Page, Y. Yan, R. Bauer, Q. Wang, J. Casey, R. Reedy, R. Matson, R. Ahrenkiel, and M. M. Al-Jassim, “Material Properties of Poly-Silicon Layers deposited by Atmospheric Pressure Iodine Vapor Transport,” Conf. Record of the 28th IEEE PVSC, September 2000, Anchorage, p.138-141. 

137.   T.H. Wang, T.F. Ciszek, and Y. Zhang, “Calibration Factors for Lifetime Measurements on Si Ingots with a Localized PCD Method,” Conf. Record of the 28th IEEE PVSC, September 2000, Anchorage, p.383-386. 

138.   T. F. Ciszek and T.H. Wang, “Silicon Float-Zone Crystal Growth as a Tool for the Study of Defects and Impurities,” invited presentation, 6th International Symposium on High-Purity Silicon (held in conjunction with the 198th meeting of the Electrochemical Society), Phoenix, Arizona, October 22-27, 2000). Published in: HIGH PURITY SILICON VI, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson (Electrochemical Society, Pennington, NJ, 2000) pp. 105-117. 

139.   T. F. Ciszek, M. R. Page, T. H. Wang, and J. A. Casey, “Crystal Growth and PV Devices Using a New Si Feedstock Source,” 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 19-22, 2001, Estes Park, CO, NREL/BK-520-30838, pp. 146-149. 

140.   T. F. Ciszek, T. H. Wang, M. R. Page, P. Menna, R. E. Bauer, E. A. Good, and J. A. Casey, “Novel Methods for Purifying Metallurgical-Grade Silicon,” 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 19-22, 2001, Estes Park, CO, NREL/BK-520-30838, pp. 150-154. 

141.   T.H. Wang, T.F. Ciszek, M.R. Page, R.E. Bauer, and M.D. Landry, “Thin Layer Si Growth by Atmospheric Pressure Iodine Vapor Transport,” 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 19-22, 2001, Estes Park, CO, NREL/BK-520-30838, pp. 155-158. 

142.   Chandra P. Khattak, David B. Joyce, Frederick Schmid, Ted F. Ciszek, Matthew R. Page, and Martha I. Symko-Davies, “Solar-Grade Silicon for Solar Cell Applications,” to be published in Proc. 17th Euro. PVSEC, Munich, Oct. 22-26, 2001. 

143.   T.F. Ciszek, T.H. Wang, M.R. Page, P. Menna, R.E. Bauer, E.A. Good, and M.D. Landry, “Alternative Solar-Grade Silicon Feedstock Approaches, ” Proc. NCPV Prog. Rev. Mtg, Lakewood, CO, Oct. 14-17, 2001, pp. 295-296. 

144.   A. Karoui, G. A. Rozgonyi, R. Zhang, and T. Ciszek, “Silicon Crystal Growth and Wafer Processing for High Efficiency Solar Cells and High Mechanical Yield,” Proc. NCPV Prog. Rev. Mtg, Lakewood, CO, Oct. 14-17, 2001, pp.157-158. 

145.   Ijaz Jafri, Mohan Chandra, HuiZhang, Vish Prasad, Chandra Reddy, Carmela Amato-Wierda, Marc Landry, and Ted Ciszek “Enhanced Bulk Polysilicon Production Using Silicon Tubes,” J. of Crystal Growth 225 (2001) pp. 330-334. 

146.   T.H. Wang, T.F. Ciszek, M.R. Page, R.E. Bauer, M.D. Landry, Q. Wang, and Y.F. Yan, “Atmospheric Pressure Iodine Vapor Transport for Thin-Silicon Growth,” Proc. NCPV Prog. Rev. Mtg, Lakewood, CO, Oct. 14-17, 2001, pp.155-156. 

147.   T.H. Wang, T.F. Ciszek, M.R. Page, R.E. Bauer, Q. Wang, and M.D. Landry, “APIVT-Grown Silicon Thin Layers and PV Devices,” in: 29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, New Jersey, 2002) pp. 94-97.    

148.   T.H. Wang, M.R. Page, and T.F. Ciszek, “Two-Dimensional Simulations of Thin-Silicon Solar Cells,” Proc. 12th WS on C-Si Matls. and Processes, NREL/BK-520-32717, Breckenridge, CO, Aug. 11-14, 2002, pp. 299-302.

  1. T.F. Ciszek and T.H. Wang, “Silicon Defect and Impurity Studies Using Float-Zone Crystal Growth as a Tool,” J. of Crystal Growth, 237-239 (P3) (2002) pp. 1685-1691. 

150.  E. A. Good, T.H. Wang, T.F. Ciszek, R.H. Frost, M.R. Page, and M.D. Landry, “Partitioning Effects in Recrystallization of Silicon from Silicon-Metal Solutions,” Proc. 12th WS on C-Si Matls. and Processes, NREL/BK-520-32717, Breckenridge, CO, Aug. 11-14, 2002, pp. 236-239. 

151.  A. Karoui, R. Zhang, G.A. Rozgonyi, and T. F. Ciszek, Effects of Dislocations on Minority Carrier Lifetime in Dislocated Float Zone Silicon, Proc. 12th WS on C-Si Matls. and Processes, NREL/BK-520-32717, Breckenridge, CO, Aug. 11-14, 2002, pp. 232-235. 

152.  T.F. Ciszek, M.R. Page, T.H. Wang, and J.A. Casey, “Float-zone and Czochralski Crystal Growth and Diagnostic Solar Cell Evaluation of a New Solar-Grade Feedstock Source,” in: 29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, New Jersey, 2002) pp. 210-213. 

153.  T.F. Ciszek, T.H. Wang, M.R. Page, R.E. Bauer, and M.D. Landry, “Solar-Grade Silicon from Metallurgical-Grade Silicon via Iodine Chemical Vapor Transport Purification,” in: 29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, New Jersey, 2002) pp. 206-209. 

154.  J. Nickerson, L. Mandrell, T.H. Wang, and T.F. Ciszek, “A Determination of the Key Sources of Variation Affecting Ingot Lifetime,” in: 29th IEEE Photovoltaic Specialist Conf. Record, New Orleans, LA, May 2002 (IEEE, New Jersey, 2002) pp. 368-370.   

155.  T.F. Ciszek, “Silicon Crystal Growth for Photovoltaics,” in: Crystal Growth Technology, Eds. H. J. Scheel and T. Fukuda (John Wiley and Sons, Ltd., Sussex, U.K., 2003) pp 267-289.

156.  T. Buonassisi, M. Heuer, O. F. Vyvenko, A. A. Istratov, E. R. Weber, Z. Cai, B. Lai, T. F. Ciszek and R. Schindler, “Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects,” Physica B: Condensed Matter, Vol. 340-342 (2003) pp. 1137-1141.

157.  T. H. Wang, M. R. Page, R. E. Bauer, T. F. Ciszek, M.D. Landry, Q.Wang,  Passivation and Compatible Device Processing of APIVT-Si Thin Layers, Kurokawa, K., et al., eds, Proceedings of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference; 11-18 May 2003, Osaka, Japan; WCPEC-3 Organizing Committee Vol. B: pp. 1407-1410.

158.  T.H. Wang, Q.Wang, M.R. Page, R.E.Bauer, and T.F. Ciszek, Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD, Thin Solid Films. Vol. 430 (2003) pp. 261-264.

159.  T.H. Wang, P.E. Sims, M.R. Page, R.E. Bauer, M.D. Landry, R. Reedy, Y. Yan, and T. F. Ciszek,  APIVT Expitaxial Growth on Zone-Melt Recrystallized Silicon, 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the workshop held 10-13 August 2003, Vail, Colorado. NREL/BK-520-34443, pp. 130-133.

160.  C. Wang, H. Zhang, T.H. Wang and T.F. Ciszek,       “A Continuous Czochralski Silicon Crystal Growth System,”  J. Crystal Growth. 250 (2003) pp. 209-214.

161.  T.F. Ciszek, “Solid-Source Boron Doping of Float-Zoned Silicon,” J. of Crystal Growth 264 (2004) pp. 116-122.

162.  T. Buonassisi, M. A. Marcus, A. A. Istratov, M. Heuer, T. F. Ciszek, B. Lai, Z. Cai, and E. R. Weber, Distribution and chemical state of Cu-rich clusters in silicon, Proc. 14th workshop on crystalline silicon solar cell materials and processes,  Winter Park, CO, (2004) pp.161-164 . 

163.  A. A. Istratov, T. Buonassisi, M. A. Marcus, T. F. Ciszek, and E. R. Weber, Dependence of precipitation behavior of Cu and Ni in CZ and multicrystalline silicon on cooling conditions, Proc. 14th workshop on crystalline silicon solar cell materials and processes, NREL, Winter Park, CO (2004) pp.165-169 .

164.  A. Karoui, T. Buonassisi, F. Sahtout Karoui, G. A. Rozgony, M. C. Martin, E. R. Weber, T. F. Ciszek, Stress-induced nitrogen and oxygen segregation and complexing investigated by high resolution synchrotron FTIR, Proc. 14th workshop on crystalline silicon solar cell materials and processes, NREL, Winter Park, CO(2004), pp.204-207.

165.  T. Buonassisi, A. A. Istratov, T. F. Ciszek, D. W. Cunningham, A. M. Gabor, R. Jonczyk, R. Schindler, M. Sheoran, A. Upadhyaya, A. Rohatgi, B. Lai, Z. Cai, M. A. Marcus, and E. R. Weber, Differences and similarities between metal clusters in mc-Si materials from different manufacturers, Proc. 14th workshop on crystalline silicon solar cell materials and processes, NREL, Winter Park, CO (2004) pp.226-229.

166.  Tonio Buonassisi, Matthew A. Marcus, Andrei A. Istratov, Matthias Heuer, Theodore F. Ciszek, Barry Lai, Zhonghou Cai, and Eicke R. Weber, “Analysis of Copper-rich Preciptiates in Silicon: Chemical State, Gettering, and Impact on Multicrystalline Silicon Solar Cell Material,” J. Appl.Phys. 97, 063503 (2005) (9 pages).

167.  T.F. Ciszek, “Photovoltaic Silicon Crystal Growth,” Book Chapter in: Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, Ed. Peter Capper  (John Wiley and Sons, Ltd., Sussex, U.K., 2005) pp 451-476.

168.  T. Buonassisi, M. D. Pickett, M. A. Marcus, A. A. Istratov,       G. Hahn, T. F. Ciszek, S. Riepe, J. Isenberg, W. Warta, R. Schindler, and E. R. Weber, “Quantifying the recombination activity of metal precipitates in multicrystalline silicon using synchrotron-based spectrally-resolved X-ray beam induced current,” Appl. Phys. Lett. 87,  044101 (2005) (3 pages).

169.  T.H. Wang, M.R. Page, T.F. Ciszek, M.F. Tamendarov, and B.N. Mukashev, “New Approaches to Solar-Grade Silicon Feedstock and Silane Productions,” Proc. 15th WS on C-Si Matls. and Processes, Vail, CO, Aug. 7-10, 2005, (NREL/BK-520-38573, November, 2005) pp. 109-112.

170.  T. Buonassisi, A.A. Istratov, M.D. Pickett, M.A. Marcus, G. Hahn, S. Riepe, J. Isenberg, W. Warta, G. Willeke, T. F. Ciszek, and E.R. Weber,  “Synchrotron-based spectrally-resolved X-ray beam induced current: a technique to quantify the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon,”  Proc. 15th WS on C-Si Matls. and Processes, Vail, CO, Aug. 7-10, 2005 (NREL/BK-520-38573, November, 2005) pp 141-145.

171.  T. Buonassisi, A.A. Istratov, M.A. Marcus, S. Peters, C. Ballif, M. Heuer, T.F. Ciszek, Z. Cai, B. Lai, R. Schindler, and E.R. Weber. Synchrotron-based investigations into metallic impurity distribution and defect engineering in multicrystalline silicon via thermal treatments,
Proc. 31st IEEE Photovoltaic Specialists Conference (Lake Buena Vista, USA) (2005) pp.1027-1030 .

172.  T. Buonassisi, A. A. Istratov, M. D. Pickett, M. Heuer, J. P. Kalejs, G. Hahn, M. A. Marcus, B. Lai, Z. Cai, S. M. Heald, T. F. Ciszek, R. F. Clark, D. W. Cunningham, A. M. Gabor, R. Jonczyk, S. Narayanan, E. Sauar, and E. R. Weber, “Chemical Natures and Distributions of Metal Impurities in Multicrystalline Silicon Materials,” Prog. Photovolt: Res. Appl. 14 (2006) pp. 513-531.

173.  T. Buonassisi, A.A. Istratov, M.D. Pickett, M.A. Marcus, T. F. Ciszek, and E.R. Weber, “Metal Precipitation at Grain Boundaries in Silicon: Dependence on Grain Boundary Character and Dislocation Decoration,” Appl. Phys. Lett. 89, 042102 (2006).

174.  T.F. Ciszek, “Growth of Alkaline-Earth Vanadate Garnet by Synthetic Contact Metamorphism with Molten V2O5-Na2SiO3 Acting on Dolomite,” J. Crystal Growth 287 (2006) pp. 323-325.  

175.  T.F. Ciszek, “Shape-Shifting Silicon Feedstock,” Proc. 16th WS on C-Si Matls. and Processes, Denver, CO, Aug. 6-9, 2006, pp. 185-188.

176.  T.F. Ciszek, “Silicon Shot Solidification in Water,” J. Crystal Growth 310 (2008) pp. 2198-2203.

177.  Mohan Narayanan and Ted Ciszek (Book Chapter), “Silicon Solar Cells: Materials, Devices, and Manufacturing,” in: Springer Handbook of Crystal Growth, Eds. G. Dhanaraj, K. Byrappa, V. Prasad, an M. Dudley (Springer‑Verlag, Berlin, 2010) pp. 1701-1718.

178.  T.F. Ciszek, “Photovoltaic materials and crystal growth research and development in the gigawatt era,” J. Crystal Growth, vol. 393, pp. 2-6, 2014.

179.  T.F. Ciszek and H.E. Gotts, “Cold-Container Crystal Growth of ‘Last-To-Freeze’ Silicon Samples, and Enhanced Detection of Metallic Impurities by ICP-MS,” in: 40th IEEE Photovoltaic Specialist Conf. Record, Denver, CO, June 2014 (IEEE, New Jersey, 2014) pp. 2969-2974.

180.  T.F. Ciszek, “Residual Dopant Levels in Silicon Feedstock Grown by Pilot-Scale Atmospheric Pressure Iodine Vapor Transport,” in: 40th IEEE Photovoltaic Specialist Conf. Record, Denver, CO, June 2014 (IEEE, New Jersey, 2014) pp. 2974-2977.